2N4403 Features and Specifications
- Silicon planar epitaxial transistor
- Pb−free packages are available
- With DC Current Gain (hFE) up to 300
- Maximum voltage across collector and emitter: 40V
- Maximum current allowed trough collector: 600mA
- Maximum voltage across collector and base: 40 V
- Maximum current allowed trough base: 50mA
- Maximum voltage across base and emitter: 5V
- Operating temperature range: -55ºC to +150ºC
- Maximum power dissipation : 0.31 W
Similar Transistors
NTE159, 2SA1015GR, 2N5401, 2N3905